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GaAlAs-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480, SFH 481, SFH 482
SFH 480
SFH 481
SFH 482
Wesentliche Merkmale * Hergestellt im Schmezepitaxieverfahren * Anode galvanisch mit dem Gehauseboden verbunden * Hohe Zuverlassigkeit * Gute spektrale Anpassung an Si-Fotoempfanger * Hermetisch dichtes Metallgehause * SFH 480: Gehausegleich mit SFH 216 * SFH 481: Gehausegleich mit BPX 43 * SFH 482: Gehausegleich mit BPX 38, BPX 65 Anwendungen * Lichtschranken fur Gleich- und Wechsellichtbetrieb * IR-Geratefernsteuerungen * Sensorik * Lichtgitter
Features * GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process * Anode is electrically connected to the case * High reliability * Matches all Si-Photodetectors * Hermetically sealed package * SFH 480: Same package as SFH 216 * SFH 481: Same package as BPX 43 * SFH 482: Same package as BPX 38, BPX 65
Applications * * * * Photointerrupters IR remote control of various equipmet Sensor technology Light-grille barrier
2001-10-01
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SFH 480, SFH 481, SFH 482
Typ Type SFH 480 SFH 480-2/3 SFH 481 SFH 481-1/2 SFH 481-2/3 SFH 482 SFH 482-1/2 SFH 482-2/3 Bestellnummer Ordering Code Q62703-Q1087 Q62703-Q5195 Q62703-Q1088 Q62703-Q4752 Q62703-Q4753 Q62703-Q1089 Q62703-Q4771 Q62703-Q4754 Gehause Package 18 A3 DIN 41876 (TO-18), Anschlusse im 2.54-mm-Raster (1/10''), Kathodenkennzeichnung: Nase am Gehauseboden 18 A3 DIN 41876 (TO-18), lead spacing 2.54 mm (1/10''), cathode marking: projection at package
SFH 482-M E7800 Q62703-Q2186
2001-10-01
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SFH 480, SFH 481, SFH 482
Grenzwerte (TC = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range SFH 480, SFH 482 Betriebs- und Lagertemperatur Operating and storage temperature range SFH 481 Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, tp = 10 s, D = 0 Surge current Verlustleistung Power dissipation Warmewiderstand Thermal resistance Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA Abstrahlwinkel Half angle SFH 480 SFH 481 SFH 482 Symbol Symbol peak Wert Value 880 Einheit Unit nm Symbol Symbol Wert Value - 40 ... + 125 Einheit Unit C
Top; Tstg
Top; Tstg
- 40 ... + 100
C
Tj VR IF IFSM Ptot RthJA RthJC
100 5 200 2.5 470 450 160
C V mA A mW K/W K/W
80
nm

6 15 30
Grad deg.
2001-10-01
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SFH 480, SFH 481, SFH 482
Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Aktive Chipflache Active chip area Abmessungen der aktiven Chipflache Dimension of the active chip area Abstand Chipoberflache bis Linsenscheitel Distance chip front to lens top SFH 480 SFH 481 SFH 482 Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, e from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Kapazitat Capacitance VR = 0 V, f = 1 MHz Durchlaspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom, Reverse current VR = 5 V Gesamtstrahlungsflu Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e, Symbol Symbol Wert Value 0.16 0.4 x 0.4 Einheit Unit mm2 mm
A LxB LxW
H H H tr, tf
4.0 ... 4.8 2.8 ... 3.7 2.1 ... 2.7 0.6/0.5
mm mm mm s
Co
25
pF
VF VF IR
1.50 ( 1.8) 2.4 (< 3.0) 0.01 ( 1)
V V A
e
12
mW
TCI
- 0.5
%/K
IF = 100 mA IF = 100 mA
Temperature coefficient of Ie or e,
Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA
TCV TC
-2 + 0.25
mV/K nm/K
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SFH 480, SFH 481, SFH 482
Gruppierung der Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Grouping of Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Symbol Symbol SFH 480-2 Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Ie min Ie max Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Bezeichnung Parameter SFH 480-3 Wert Value SFH 481 SFH 481-1 SFH 481-2 Einheit Unit
> 40 -
> 63 -
10 -
10 20
16 -
mW/sr mW/sr
Ie typ. Symbol Symbol
540
630
220 Wert Value
130
220
mW/sr Einheit Unit
SFH 482 Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Ie min Ie max Strahlstarke Radiant intensity IF = 1 A, tp = 100 s
1)
SFH 482-1
SFH 482-2
SFH 482-3
SFH 482-M E 78001)
3.15 -
3.15 6.3
5 10
8 -
1.6 ... 3.2 mW/sr - mW/sr
Ie typ.
-
40
65
80
-
mW/sr
Die Messung der Strahlstarke und des Halbwinkels erfolgt mit einer Lochblende vor dem Bauteil (Durchmesser der Lochblende: 2.0 mm; Abstand Lochblende zu Gehauseruckseite: 5.4 mm). Dadurch wird sichergestellt, da bei der Strahlstarkemessung nur diejenige Strahlung in Achsrichtung bewertet wird, die direkt von der Chipoberflache austritt. Von der Bodenplatte reflektierte Strahlung (vagabundierende Strahlung) wird dagegen nicht bewertet. Diese Reflexionen sind besonders bei Abbildungen der Chipoberflache uber Zusatzoptiken storend (z.B. Lichtschranken groer Reichweite). In der Anwendung werden im allgemeinen diese Reflexionen ebenfalls durch Blenden unterdruckt. Durch dieses, der Anwendung entsprechende Meverfahren ergibt sich fur den Anwender eine besser verwertbare Groe. Diese Lochblendenmessung ist gekennzeichnet durch den Eintrag E 7800", der an die Typenbezeichnung angehangt ist. An aperture is used in front of the component for measurement of the radiant intensity and the half angle (diameter of the aperture: 1.1 mm; distance of aperture to case back side: 4 mm). This ensures that solely the radiation in axial direction emitting directly from the chip surface will be evaluated during measurement of the radiant intensity. Radiation reflected by the bottom plate (stray radiation) will not be evaluated. These reflections impair the projection of the chip surface by additional optics (e.g. long-range light reflection switches). In respect of the application of the component, these reflections are generally suppressed by apertures as well. This measuring procedure corresponding with the application provides more useful values. This aperture measurement is denoted by "E 7800" added to the type designation. 5
1)
2001-10-01
SFH 480, SFH 481, SFH 482
Radiation Characteristics, SFH 480 Irel = f ()
40 30 20 10 0 1.0
OHR01888
50
0.8 60
0.6
70
0.4
80 90
0.2 0
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
Radiation Characteristics, SFH 481 Irel = f ()
40 30 20 10 0 1.0
OHR01889
50
0.8 60
0.6
70
0.4
80 90
0.2 0
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
Radiation Characteristics, SFH 482 Irel = f ()
40 30 20 10 0 1.0
OHR01890
50
0.8 60
0.6
70
0.4
80 90
0.2 0
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2001-10-01
6
SFH 480, SFH 481, SFH 482
Relative Spectral Emission Irel = f ()
100 rel % 80
OHR00877
Radiant Intensity
Ie = f (IF) Ie 100 mA
OHR00878
Single pulse, tp = 20 s
10 2 e (100mA) 10
1
Max. Permissible Forward Current SFH 481, IF = f (TA, TC)
240
OHR00946
e
F mA
200 R thJC = 160 K/W
60
10 0
160
120
40
10 -1
80
20
10 -2
R thJA = 450 K/W
40
0 750
10 -3
800
850
900
950 nm 1000
10 0
10 1
10 2
10 3 mA 10 4 F
0
0
20
40
60
80 C 100 T A, T C
Forward Current, IF = f (VF) Single pulse, tp = 20 s
10 1
OHR01173
Permissible Pulse Handling Capability IF = f (), TC = 25 C, duty cycle D = parameter
10 4
OHR00948
Max. Permissible Forward Current SFH 480, SFH 482, IF = f (TA, TC)
240
OHR00396
F
A
0
F mA 5
tp D= tp T T
F
F mA
200
10
D = 0.005 0.01 0.02 0.05 10 3 0.1 0.2 5
160
R thJC = 160 K/W
10 -1
120 R thJA = 450 K/W
80
10 -2
0.5
40
DC
10 -3 0 1 2 3 4 VF 5
10 2 10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0 tp
0
0
20
40
60
80
100 C 130 T A, T C
2001-10-01
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SFH 480, SFH 481, SFH 482
Mazeichnung Package Outlines
SFH 480
Cathode (SFH 480) Anode (SFH 216, SFH 400) Chip position 2.7 (0.106)
2.54 (0.100) spacing
Radiant Sensitive area
3) .04 ) (0 .035 1.1 .9 (0 0
o0.45 (0.018)
o4.8 (0.189) o4.6 (0.181)
5.3 (0.209) 5.0 (0.197)
14.5 (0.571) 12.5 (0.492) 7.4 (0.291) 6.6 (0.260)
SFH 481
.04
(2.7 (0.106)) Chip position
3)
o4.8 (0.189) o4.6 (0.181)
o0.45 (0.018)
Anode = SFH 481 Cathode = SFH 401 (package)
(0
1.1
2.54 (0.100) spacing
welded 5.3 (0.209) 5.0 (0.197) 14.5 (0.571) 12.5 (0.492)
glass lens 6.4 (0.252) 5.6 (0.220)
0.9
(0
.03
5)
o5.6 (0.220) o5.3 (0.209)
GETY6091
SFH 482
o0.45 (0.018)
0.9
(0 .0
1.1
Chip position
o4.8 (0.189) o4.6 (0.181)
35
(0
(2.7 (0.106))
Radiant sensitive area
.04
)
5.5 (0.217) 5.0 (0.197)
3)
o5.6 (0.220) o5.3 (0.209)
GEOY6314
1. 0.9 1 (0 (0 .043 .03 ) 5)
14.5 (0.571) 12.5 (0.492) Cathode (SFH 402, BPX 65) Anode (SFH 482)
o5.3 (0.209) o5.0 (0.197)
o5.6 (0.220) o5.3 (0.209)
GETY6013
Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
2001-10-01
8
2.54 (0.100) spacing
1.1 (0 .04 3)
1.1 (0 0.9 (0 .04 3) .03 5)
0.9 (0
.03
5)
SFH 480, SFH 481, SFH 482
Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-10-01 9

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